? 2016 ixys corporation, all rights reserved ds100721(5/16) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 250 ? a 1500 v v gs(th) v ds = v gs , i d = 250 a 2.5 5.0 v i gss v gs = ? 30v, v ds = 0v ?????????????? 100 na i dss v ds = v dss , v gs = 0v 10 ? a t j = 125 ? c 100 ??? a r ds(on) v gs = 10v, i d = 1.5a, note 1 7.3 ? high voltage power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode IXTQ3N150M symbol test conditions maximum ratings v dss t j = 25c to 150c 1500 v v dgr t j = 25c to 150c, r gs = 1 m ? 1500 v v gss continuous ??????????????????????? 30 v v gsm transient ??????????????????????? 40 v i d25 t c = 25 ? c 1.83 a i dm t c = 25 ? c, pulse width limited by t jm 9.00 a i a t c = 25 ? c 3 a e as t c = 25 ? c 250 mj dv/dt i s ? i dm , v dd ? v dss , t j ? 150 ? c 5 v/ns p d t c = 25 ? c 73 w t j - 55 ... +150 ? c t jm 150 ? c t stg - 55 ... +150 ? c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque 1.13/10 nm/lb.in. weight 6 g features ? plastic overmolded tab for electrical isolation ? avalanche rated ? fast intrinsic diode ? low package inductance advantages ? high power density ? easy to mount ? space savings applications ? high voltage power supplies ? capacitor discharge applications ? pulse circuits v dss = 1500v i d25 = 1.83a r ds(on) ? ? ? ? ? 7.3 ? ? ? ? ? advance technical information overmolded (ixtq...m) outline g = gate d = drain s = source g d s
IXTQ3N150M ixys reserves the right to change limits, test conditions, and dimensions. note 1. pulse test, t ?? 300 ? s, duty cycle, d ?? 2 %. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. g fs v ds = 20v, i d = 1.5a, note 1 2.2 3.6 s c iss 1375 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 90 pf c rss 30 pf r gi gate input resistance 3.0 ?? t d(on) 19 ns t r 21 ns t d(off) 42 ns t f 25 ns q g(on) 38.6 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 1.5a 6.5 nc q gd 19.0 nc r thjc 1.7 ?? c/w r thcs 0.21 ? c/w resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 1.5a r g = 5 ? (external) source-drain diode symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max i s v gs = 0v, note1 3 a i sm repetitive, pulse width limited by t jm 12 a v sd i f = i s , v gs = 0v, note 1 1.3 v t rr 0.9 ? s q rm 6.7 ????????????? c i rm 15 a i f = 1.5a, -di/dt = 100a/ s v r = 100v
? 2016 ixys corporation, all rights reserved IXTQ3N150M fig. 1. output characteristics @ t j = 25oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 4 8 12 16 20 24 28 32 v ds - volts i d - amperes v gs = 10v 7v 4v 5.5v 5v 6v fig. 2. output characteristics @ t j = 125oc 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 5 10 15 20 25 30 35 40 v ds - volts i d - amperes v gs = 10v 6v 4v 5v fig. 3. r ds(on) normalized to i d = 1.5a value vs. junction temperature 0.2 0.6 1.0 1.4 1.8 2.2 2.6 3.0 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 3a i d = 1.5a fig. 4. r ds(on) normalized to i d = 1.5a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 0.00.51.01.52.02.53.03.54.04.5 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. input admittance 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 5. maximum drain current vs. case temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
IXTQ3N150M ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 8. forward voltage drop of intrinsic diode 0 1 2 3 4 5 6 7 8 9 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 9. gate charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 40 q g - nanocoulombs v gs - volts v ds = 750v i d = 1.5a i g = 10ma fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width - seconds z (th)jc - k / w fig. 12. forward-bias safe operating area 0.01 0.1 1 10 10 100 1,000 10,000 v ds - volts i d - amperes t j = 150oc t c = 25oc single pulse 25s 1ms 100s r ds(on) limit 10ms dc 100ms 1s ixys ref: t_3n150 (4n)5-02-16-b
? 2016 ixys corporation, all rights reserved IXTQ3N150M overmolded (ixtq...m) outline 1 - gate 2 - drain 3 - source
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